20 GHz 5 dB gain analog multipliers with AlGaAs/GaAs HBTs

Author

Osafune, Kazuo ; Yamauchi, Yoshiki

Author_Institution

NTT LSI Lab., Kanagawa, Japan

fYear

1991

fDate

10-14 July 1991

Firstpage

1285

Abstract

DC-to-above-20 GHz monolithic Gilbert Cell analog multipliers have been developed using AlGaAs/GaAs heterojunction bipolar transistor (HBT) technology. As a double balance active mixer, it exhibits very high conversion gain of above +5 dB with extremely high local oscillator-intermediate frequency (LO-IF) isolation of 33 dB for Rf/LO inputs up to 20 GHz. As a detection mixer in coherent optical heterodyne receivers, it can operate for RF/Lo inputs up to 15 GHz under a less than -7.5 dBm LO input condition.<>

Keywords

III-V semiconductors; MMIC; aluminium compounds; bipolar integrated circuits; gallium arsenide; linear integrated circuits; mixers (circuits); multiplying circuits; 0 to 20 GHz; 20 GHz; 33 dB; 5 dB; AlGaAs-GaAs; LO-IF isolation; coherent optical heterodyne receivers; detection mixer; double balance active mixer; heterojunction bipolar transistor; high conversion gain; high local oscillator-intermediate; local oscillator intermediate frequency isolation; monolithic Gilbert Cell analog multipliers; semiconductors; Frequency conversion; Gain; Gallium arsenide; Heterojunction bipolar transistors; Isolation technology; Mixers; Optical frequency conversion; Optical mixing; Optical receivers; Ultraviolet sources;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1991., IEEE MTT-S International

Conference_Location

Boston, MA, USA

ISSN

0149-645X

Print_ISBN

0-87942-591-1

Type

conf

DOI

10.1109/MWSYM.1991.147258

Filename

147258