A hypersensitive voltage-variable silicon capacitor

A voltage-variable capacitor, referred to as "hypersensitive" is described where, in the relation C=V^-n, hypersensitivity is defined as n >0.5. The capacitors described have n=1. This type of device obtains hypersensitivity by the use of high-gradient, diffused, impurity distributions and very high Q values are possible with the method of fabrication. As is usual with such devices Q values are higest at the lowest capacitance value. These "hypersensitive" capacitors have a range of 10 to 1 or more in capacitance over a range of 10 to 1 in voltage. Q values of these units are greater than 50 at 50 mcps, with maximum capacitance reported from 20µµf to 1000µµf.