Growth of low dislocation density InP single crystals by the phosphorus vapor controlled LEC method

Author

Kohiro, K. ; Kainosho, K. ; Oda, O.

Author_Institution

Nippon Min. Co. Ltd., Saitama, Japan

fYear

1991

fDate

8-11 Apr 1991

Firstpage

8

Lastpage

11

Abstract

The growth of 3-in S-doped and Fe-doped and 2-in Sn-doped InP single crystals with reduced axial temperature gradients using the phosphorus vapor controlled liquid encapsulation Czochralski (PC-LEC) method is discussed. It is shown that, in the case of S-doped crystals, the dislocation-free area of the crystal is increased using the PC-LEC method, compared to that of crystals grown using the conventional LEC method. It is also shown that 3-in Fe-doped InP could be grown with a dislocation density lower than 10⁴ cm^-2. The average EPD was lower than 5×10³ cm^-2 in 2-in Sn-doped InP. The photoluminescence intensity of PC-LEC crystals was much higher than that of conventional LEC crystals in the case of Sn-doped InP

Keywords

III-V semiconductors; crystal growth from melt; dislocation density; dislocation etching; indium compounds; semiconductor growth; III-V semiconductor; InP; InP single crystals; InP:Fe; InP:S; InP:Sn; etch pt density; liquid encapsulated Czochralski method; low dislocation density; photoluminescence intensity; reduced axial temperature gradients; vapor controlled LEC method; Crystalline materials; Crystals; Etching; Furnaces; Indium phosphide; Photoluminescence; Semiconductor device measurement; Temperature distribution; Temperature measurement; Thermal stresses;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1991., Third International Conference.

Conference_Location

Cardiff

Print_ISBN

0-87942-626-8

Type

conf

DOI

10.1109/ICIPRM.1991.147283

Filename

147283