Modelling of leakage currents in AlGaInP/GaInP quantum-well lasers

Summary form only given. There is continuing interest in the use of visible-emitting AlGaInP-GaInP quantum well lasers in optical information storage systems, optical pumping of solid-state laser media and short-haul communication systems employing plastic fibers. In these applications ability to operate at high temperatures is important, nevertheless it is well known that there is a strong thermally activated contribution to the threshold current of these devices at room temperature and above, which in 670-nm devices is thought to be due to the leakage of electrons through the p-cladding layer. We have modelled 670-nm devices with two 6.8 nm GaInP compressively strained quantum wells.