Selective oxidation of integrated optical elements

Author

Blum, Oliver ; Lear, K.L. ; Hou, Huijuan

Author_Institution

Sandia Nat. Labs., Albuquerque, NM, USA

fYear

1996

fDate

2-7 June 1996

Firstpage

462

Abstract

Summary form only given. Selective oxidation of AlGaAs compounds allows formation of Al/sub 2/O/sub 3/ layers embedded in unoxidised semiconductor material. It is known that the oxidation rate depends very strongly on the Al concentration. By vertically tailoring Al mole fraction in such a way that upon selective oxidation from the side of the exposed mesa, oxide-semiconductor interface penetration into the semiconductor follows a desired dependence in the vertical direction integrated optical elements can be formed.

Keywords

alumina; integrated optics; optical fabrication; optical films; oxidation; semiconductor technology; semiconductor-insulator boundaries; Al concentration; Al mole fraction; Al/sub 2/O/sub 3/; Al/sub 2/O/sub 3/ layers; AlGaAs; AlGaAs compounds; exposed mesa; integrated optical element fabrication; oxidation rate; oxide-semiconductor interface penetration; selective oxidation; unoxidised semiconductor material; vertical direction; vertically tailoring; Gallium arsenide; Integrated optics; Length measurement; Lenses; Optical microscopy; Optical refraction; Optical superlattices; Optical variables control; Oxidation; Scanning electron microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1996. CLEO '96., Summaries of papers presented at the Conference on

Conference_Location

Anaheim, CA, USA

Print_ISBN

1-55752-443-2

Type

conf

Filename

864927