Properties of facet-coated 1.3 μm InGaAsP/InP MQW lasers

Author

Seltzer, C.P. ; Bagley, M. ; Sherlock, G. ; Elton, D.J. ; Perrin, S.D. ; Cooper, D.M.

Author_Institution

British Telecom Res. Lab., Ipswich, UK

fYear

1991

fDate

8-11 Apr 1991

Firstpage

192

Lastpage

195

Abstract

Multiple quantum well (MQW) external cavity lasers and optical amplifiers operating in the 1.3 μm optical fiber communications window are described. The device designs and fabrications are discussed. It is demonstrated that MQW devices offer enhanced characteristics when compared with conventional bulk devices. An MQW laser with a single facet coat in an external cavity was measured to have a tuning range of 160 nm from 1.255 μm to 1.417 μm. The device had a peak power of over 40 mW at 1.336 μm, and a side mode suppression ratio of more than 40 dB. An optical amplifier with a length of 500 μm had a bandwidth of 110 nm, a 18 dB single-pass gain, and saturated output power of 14 dBm (25 mW)

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; laser tuning; optical communication equipment; semiconductor junction lasers; 1.255 to 1.417 micron; 1.3 micron; 18 dB; 25 mW; 40 mW; BH lasers; Fabry-Perot lasers; III-V semiconductors; InGaAsP-InP lasers; MQW lasers; external cavity lasers; facet-coated; optical amplifiers; optical fiber communications window; peak power; saturated output power; side mode suppression ratio; single-pass gain; tuning range; Fiber lasers; Indium phosphide; Laser tuning; Optical fiber amplifiers; Optical saturation; Power amplifiers; Quantum well devices; Quantum well lasers; Semiconductor optical amplifiers; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1991., Third International Conference.

Conference_Location

Cardiff

Print_ISBN

0-87942-626-8

Type

conf

DOI

10.1109/ICIPRM.1991.147334

Filename

147334