• DocumentCode
    3552217
  • Title

    Physical origin of the high output conductance in In0.52Al0.48As/In0.53Ga0.47 As/InP HEMTs

  • Author

    Pao, Yi-ching ; Harris, J.S., Jr.

  • Author_Institution
    Litton Solid State Div., Santa Clara, CA, USA
  • fYear
    1991
  • fDate
    8-11 Apr 1991
  • Firstpage
    344
  • Lastpage
    348
  • Abstract
    The underlying device physics of the In0.52Al0.48 As/In0.53Ga0.47As/InP HEMT drain I- V characteristic are discussed. A model of premature current saturation (PCS) is proposed to explain the improvements in the output conductance achieved by the low conductance drain (LCD) HEMT. Using this model, it is shown that the high output conductance observed in conventional highly doped cap In0.52Al0.48As/In 0.53Ga0.47As/InP HEMTs is caused by a high transverse channel electric field near the drain, which results in hot electron induced two-dimensional electron gas (2DEG) carrier deconfinement (i.e., real-space transfer), causing the drain current to saturate prematurely (i.e., incomplete saturation)
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor device models; HEMTs; I-V characteristic; In0.52Al0.48As-In0.53Ga0.47 As-InP; carrier deconfinement; device physics; low conductance drain; model; output conductance; premature current saturation; real-space transfer; semiconductors; transverse channel electric field; Acoustic scattering; Boltzmann equation; Distribution functions; Electron optics; HEMTs; Heterojunctions; Light scattering; MODFETs; Optical scattering; Phonons;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1991., Third International Conference.
  • Conference_Location
    Cardiff
  • Print_ISBN
    0-87942-626-8
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1991.147387
  • Filename
    147387
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3552217