CBE-grown InGaAs/InP QW structures: an extensive investigation

Author

Antolini, A. ; Bradley, P.J. ; Cacciatore, C. ; Campi, D. ; Gastaldi, G. ; Genova, F. ; Iori, M. ; Lamberti, C. ; Morello, G. ; Papuzza, C. ; Rigo, C.

Author_Institution

Centro Studi e Lab. Telecomunicazioni, Torino, Italy

fYear

1991

fDate

8-11 Apr 1991

Firstpage

359

Lastpage

362

Abstract

Chemical beam epitaxially (CBE) grown InGaAs/InP MQW interfaces were analyzed to explain experimental data from high-quality single and multiple quantum wells (QWs). An exponential decay of the group V flux leading to non-negligible effects for several seconds after the switch are assumed to explain photoluminescence (PL) and X-ray diffraction (XRD) results, even for a very fast flux switching system. The very intense absorption peak and the high number of satellite peaks in the diffraction rocking curve obtained even on samples grown in non-optimized conditions confirm the potential of CBE

Keywords

III-V semiconductors; X-ray diffraction examination of materials; chemical beam epitaxial growth; gallium arsenide; indium compounds; luminescence of inorganic solids; photoluminescence; semiconductor growth; semiconductor quantum wells; CBE; InGaAs-InP; X-ray diffraction; diffraction rocking curve; fast flux switching; group V flux; intense absorption peak; multiple quantum wells; nonneglible effects; nonoptimized conditions; photoluminescence; semiconductors; Chemical analysis; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Photoluminescence; Quantum well devices; Switches; Switching systems; X-ray diffraction; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1991., Third International Conference.

Conference_Location

Cardiff

Print_ISBN

0-87942-626-8

Type

conf

DOI

10.1109/ICIPRM.1991.147390

Filename

147390