DocumentCode
3552435
Title
Passivation of InP surfaces
Author
Kulisch, W. ; Kiel, F. ; Bock, A. ; Frenck, H.J. ; Kassing, R.
Author_Institution
Inst. of Tech. Phys., Kassel Univ., Germany
fYear
1991
fDate
8-11 Apr 1991
Firstpage
571
Lastpage
574
Abstract
Results of a study of the suitability of various insulators in combination with various deposition techniques for the passivation of InP surfaces are presented. It is shown that among the techniques investigated, the best results were obtained with the remote plasma-enhanced chemical vapor deposition (PECVD) technique. The benefits of integral photoluminescence measurements for judging the influence of a variety of process steps during InP passivation on the semiconductor surface are discussed
Keywords
III-V semiconductors; indium compounds; luminescence of inorganic solids; passivation; photoluminescence; plasma CVD; InP surface passivation; insulator deposition techniques; integral photoluminescence measurements; remote plasma-enhanced chemical vapor deposition; Cleaning; Heating; Indium phosphide; Inductors; Insulation; Passivation; Photoluminescence; Plasma applications; Plasma measurements; Plasma temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location
Cardiff
Print_ISBN
0-87942-626-8
Type
conf
DOI
10.1109/ICIPRM.1991.147441
Filename
147441
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