Passivation technology using an ultrathin Si interface control layer for air-exposed InGaAs surfaces

Author

Hasegawa, Hideki ; Akazawa, Masamichi ; Ohue, Eiji

Author_Institution

Dept. of Electr. Eng., Hokkaido Univ., Sapporo, Japan

fYear

1991

fDate

8-11 Apr 1991

Firstpage

630

Lastpage

633

Abstract

The growth of a surface passivation structure for In_0.53Ga_0.47As that utilizes an ultrathin molecular beam epitaxial (MBE) Si interface control layer (ICL) is discussed. The structure was realized by growing all the layers, including the MBE InGaAs layer, the MBE-Si ICL, and the outer photo-CVD SiO₂ layer, in a UHV-based system without air exposure. It is shown that by utilizing a suitable surface treatment technique prior to the growth of the Si ICL, the surface passivation technology becomes applicable to air-exposed InGaAs surfaces

Keywords

III-V semiconductors; gallium arsenide; indium compounds; passivation; III-V semiconductor; InGaAs; InGaAs surfaces; MBE elemental semiconductor layer; Si interface control layer; air-exposed surfaces; surface passivation structure; ultrahigh vacuum system; Chemical processes; Chemical technology; Etching; Hafnium; Indium gallium arsenide; Molecular beam epitaxial growth; Optical surface waves; Passivation; Substrates; Surface treatment;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1991., Third International Conference.

Conference_Location

Cardiff

Print_ISBN

0-87942-626-8

Type

conf

DOI

10.1109/ICIPRM.1991.147454

Filename

147454