Resistless fabrication of integrated circuits

The chemical etch rate of solicon dioxide layers can be increased typically 3 to 4 times by bombardment with energetic, electrons. It was shown earlier that this phenomenon could be used to produce diffusion windows and hence to fabricate planar silicon devices without any photo-resist steps. The excellent resolution capabilities (<0.6 micron holes) of the bombardment enhanced etch rate (BEER) process make it attractive for fabrication of micron size devices and large arrays provided that the proper bombardment patterns can be generated.