DocumentCode
3553066
Title
Silicon monolithic I. C. latch for light-emitting diode displays
Author
Frescura, B.L.
Volume
15
fYear
1969
fDate
1969
Firstpage
90
Lastpage
92
Abstract
A PNPN latch is an attractive solution for incorporating memory functions in solid state displays, since it consumes power only in the "on" condition. Light-emitting diodes, incorporated into a four-layer PNPN latch, so that the memory and light-emitting device are an integral part of the same structure had been proposed (1). Recent work (2) resulted in a numeric display using a hybrid assembly of GaAsx P1-x light-emitting diode (LED) sources and silicon monolithic I. C.\´s are drivers. This paper deals with design of a array of latch type of memory elements for use with GaAsx P1-x LED\´s fabricated in silicon monolithic I.C. form.
Keywords
Brightness; Circuits; Displays; Gallium arsenide; Latches; Light emitting diodes; Luminescence; Phosphors; Radiography; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1969 International
Type
conf
DOI
10.1109/IEDM.1969.188146
Filename
1476027
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