• DocumentCode
    3553066
  • Title

    Silicon monolithic I. C. latch for light-emitting diode displays

  • Author

    Frescura, B.L.

  • Volume
    15
  • fYear
    1969
  • fDate
    1969
  • Firstpage
    90
  • Lastpage
    92
  • Abstract
    A PNPN latch is an attractive solution for incorporating memory functions in solid state displays, since it consumes power only in the "on" condition. Light-emitting diodes, incorporated into a four-layer PNPN latch, so that the memory and light-emitting device are an integral part of the same structure had been proposed (1). Recent work (2) resulted in a numeric display using a hybrid assembly of GaAsxP1-xlight-emitting diode (LED) sources and silicon monolithic I. C.\´s are drivers. This paper deals with design of a array of latch type of memory elements for use with GaAsxP1-xLED\´s fabricated in silicon monolithic I.C. form.
  • Keywords
    Brightness; Circuits; Displays; Gallium arsenide; Latches; Light emitting diodes; Luminescence; Phosphors; Radiography; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1969 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1969.188146
  • Filename
    1476027