Design and performance of deflected-beam electron-beam semiconductor amplifiers

This paper describes the design and testing of developmental electron-beam semiconductor devices as dc pulse and r-f pulse amplifiers. These devices employ a well-focused elcetron beam deflected in proportion to the input signal to control the current in the semiconductor target. Both Class A and Class B amplifier configurations are described with a prediction of their relative efficiency and distortion properties. The use of lumped and traveling-wave deflection systems is considered.