• DocumentCode
    3553343
  • Title

    Schottky-gate Gunn-effect digital device

  • Author

    Yanai, H. ; Sugeta, T. ; Sekido, K.

  • Author_Institution
    University of Tokoyo, Japan
  • Volume
    17
  • fYear
    1971
  • fDate
    1971
  • Firstpage
    62
  • Lastpage
    62
  • Abstract
    The n-GaAs planar Gunn device with a Schottky-barrier gate near the cathode has been operated by controlling a domain nucleation-notch by means of the increase in the field due to the extension of the depletion layer under the gate. This three-terminal Gunn-effect digital device has several primary advantages such as excellent uni-directivity (more than 30 dB), simplicity in construction and circuit use, and a large trigger capability (more than 100 mA/V).
  • Keywords
    Cathodes; Computer simulation; Gunn devices; Inhibitors; Logic devices; Pulse circuits; Repeaters; Resistors; Shift registers; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1971 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1971.188385
  • Filename
    1476723
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3553343