DocumentCode
3553401
Title
Small-area, high-power millimeter wave avalanche diodes
Author
Weller, K.P. ; Wen, C.P.
Author_Institution
RCA Laboratories, Princeton, N. J.
Volume
17
fYear
1971
fDate
1971
Firstpage
128
Lastpage
130
Abstract
A procedure has been developed for fabricating small avalanche diodes of either silicon or GaAs using a novel electrochemical etching technique plus electroplating of a copper heat-sinking-block. The etching technique provides improved uniformity and thickness control; 6 micron layers over 1.5 cm diameter wafers have been reproducibly fabricated with little difficulty.
Keywords
Chemicals; Contracts; Copper; Etching; Gain; Gallium arsenide; Microstrip; Semiconductor diodes; Silicon; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1971 International
Type
conf
DOI
10.1109/IEDM.1971.188439
Filename
1476777
Link To Document