DocumentCode
3553402
Title
GaAs impatt diodes with improved CW efficiency and noise performance
Author
Huang, H.C. ; Levine, P.A. ; Gobat, A.R. ; Klatskin, J.B.
Author_Institution
RCA Corporation, Princeton, N. J.
Volume
17
fYear
1971
fDate
1971
Firstpage
130
Lastpage
130
Abstract
GaAs Schottky barrier Impatt diodes with nearly ideal I-V characteristics have been fabricated using nichrome as the barrier metal. The diodes were fabricated from epitaxial wafer structures grown by the vapor hydride process. The diodes were in the form of etched mesas with integral plated heat sinks or scribed mesas TC bonded to copper studs.
Keywords
Acoustical engineering; Bandwidth; Bonding; Copper; Etching; Gallium arsenide; Heat sinks; Noise measurement; Oscillators; Schottky diodes;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1971 International
Type
conf
DOI
10.1109/IEDM.1971.188440
Filename
1476778
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