Device design considerations for ion implanted MOSFETs

Author

Rideout, V.L. ; Gaensslen, F.H. ; LeBlanc, A.

Author_Institution

IBM Thomas J. Watson Research Center, Yorktown Heights, N. Y.

Volume

fYear

1973

fDate

1973

Firstpage

148

Lastpage

151

Keywords

Conductivity; Doping profiles; FETs; Implants; Ion implantation; MOSFETs; Predictive models; Switches; Switching circuits; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1973 International

Type

DOI

10.1109/IEDM.1973.188671

Filename

1477548

Link To Document