• DocumentCode
    3553857
  • Title

    Multi-color light emitting diodes with a double junction structure

  • Author

    Saitoh, T. ; Matsubara, S. ; Suzuki, T. ; Minagawa, S.

  • Author_Institution
    Hitachi Ltd., Tokyo, Japan
  • Volume
    19
  • fYear
    1973
  • fDate
    1973
  • Firstpage
    540
  • Lastpage
    543
  • Abstract
    A GaAs:Si-GaAsP heterostructure chip coated with NaYF4:Yb,Er phosphor has been fabricated to demonstrate a multi-color operation. The one-chip LEDs with a double junction showed a centro-symmetrical distribution of the light intensity of the each color, and assured uniformity of intermediate hue between green and red by adjusting the thickness of the phosphor. The brightness of green and red was more than 1OO ft.L at the current density of 20 A/cm2and the power efficiency was 2 \\sim 3 \\times 10^{-4} for green. The brightness of the green light was lower than that of 250 fL at 20 A/cm2for a single LED, because of the refraction of infrared light in the GaAsP layer.
  • Keywords
    Brightness; Current density; Gold alloys; Laboratories; Light emitting diodes; Phosphors; Silicon alloys; Surface resistance; Wafer bonding; Zinc;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1973 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1973.188780
  • Filename
    1477657
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3553857