Device modeling for MOS devices at low temperatures

Author

Briglia, Frank ; Ho, Fat Duen

Author_Institution

Dept. of Electr. & Comput. Eng., Alabama Univ., Huntsville, AL, USA

fYear

1991

fDate

7-10 Apr 1991

Firstpage

378

Abstract

An attempt was made to develop a two-dimensional model for solving Poisson´s equation over a temperature range of 50-350 K for MOS devices. This required the incorporation of temperature dependencies in Poisson´s equation relevant to MOS transistors. To solve the system of nonlinear differential Poisson´s equations, the program developed uses linearization techniques in conjunction with Newton´s method and the successive over relaxation method. The linearizing techniques replace nonlinear equations with linear approximations derived from the truncation of the expansion of the nonlinear terms. The results of the numerical analysis consist of the printout of electrostatic potential and the carrier densities for electrons and holes as a function of each data point´s position within the device

Keywords

carrier density; electric potential; insulated gate field effect transistors; linearisation techniques; nonlinear differential equations; semiconductor device models; 50 to 350 K; MOS devices; MOS transistors; Newton method; Poisson equation; carrier densities; electrostatic potential; linearization techniques; low temperatures; nonlinear differential equations; numerical analysis; successive over relaxation method; two-dimensional model; Linear approximation; Linearization techniques; MOS devices; MOSFETs; Newton method; Nonlinear equations; Poisson equations; Relaxation methods; Temperature dependence; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Southeastcon '91., IEEE Proceedings of

Conference_Location

Williamsburg, VA

Print_ISBN

0-7803-0033-5

Type

conf

DOI

10.1109/SECON.1991.147777

Filename

147777