• DocumentCode
    3553948
  • Title

    Laser scanning of active semiconductor devices

  • Author

    Sawyer, D.E. ; Berning, D.W.

  • Author_Institution
    National Bureau of Standards, Washington, D.C.
  • Volume
    21
  • fYear
    1975
  • fDate
    1975
  • Firstpage
    111
  • Lastpage
    114
  • Abstract
    A laser scanner is described which can nondestructively explore electrical characteristics of semiconductor devices on a point-by-point basis. The results of applying the scanner to electronically map temperature distributions and hot spots in a power transistor are given. The results of mapping localized nonlinearities in electrical operation and 0.5 GHz response are also presented. Pictures show the progress of logic in a MOS shift register and demonstrate the ability to change at will the logical state of an embedded active cell with the laser.
  • Keywords
    Displays; Intensity modulation; Laser beams; Laser transitions; NIST; Power transistors; Semiconductor devices; Semiconductor lasers; Silicon; Surface emitting lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1975 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1975.188837
  • Filename
    1478198