DocumentCode
3553948
Title
Laser scanning of active semiconductor devices
Author
Sawyer, D.E. ; Berning, D.W.
Author_Institution
National Bureau of Standards, Washington, D.C.
Volume
21
fYear
1975
fDate
1975
Firstpage
111
Lastpage
114
Abstract
A laser scanner is described which can nondestructively explore electrical characteristics of semiconductor devices on a point-by-point basis. The results of applying the scanner to electronically map temperature distributions and hot spots in a power transistor are given. The results of mapping localized nonlinearities in electrical operation and 0.5 GHz response are also presented. Pictures show the progress of logic in a MOS shift register and demonstrate the ability to change at will the logical state of an embedded active cell with the laser.
Keywords
Displays; Intensity modulation; Laser beams; Laser transitions; NIST; Power transistors; Semiconductor devices; Semiconductor lasers; Silicon; Surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1975 International
Type
conf
DOI
10.1109/IEDM.1975.188837
Filename
1478198
Link To Document