DocumentCode
3554048
Title
Linearity of high-power, high-radiance Gax Al1-x As:Ge double heterostructure LED´s
Author
Straus, J. ; Szentesi, O.I.
Author_Institution
Bell-Northern Research, Ottawa, Ontario
Volume
21
fYear
1975
fDate
1975
Firstpage
484
Lastpage
486
Abstract
Distortion measurements on a series of Burrus type germanium-doped GaAlAs double-heterostructure LED´s indicate that in the investigated doping range the overall shape of the total harmonic distortion (THD) versus dc bias curve is relatively insensitive to the amount of dopant present either in the active or second confining layers. The THD figures measured at 1 KHz with 100 mA dc bias and 36 mA peak-to-peak modulation currents were in the range of 42 to 44 dB down on the fundamental. The results of temperature measurements show that with increasing temperature the THD increases; at 100mA dc bias, the increase is linear with a slope of approximately 0.06 dB/°C.
Keywords
Current measurement; Distortion measurement; Doping; Light emitting diodes; Linearity; Optical design; Optical fiber communication; Shape measurement; Temperature dependence; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1975 International
Type
conf
DOI
10.1109/IEDM.1975.188928
Filename
1478289
Link To Document