• DocumentCode
    3554213
  • Title

    Interface state density in Au and Al nGaAs Schottky diodes

  • Author

    Borrego, J.M. ; Gutmann, R.J. ; Ashok, S. ; Ashok, S.

  • Author_Institution
    Rensselaer Polytechnic Institute, Troy, New York
  • Volume
    22
  • fYear
    1976
  • fDate
    1976
  • Firstpage
    365
  • Lastpage
    368
  • Abstract
    A method for determining the interface state density in Schottky diodes taking into account both I-V and C-V data while considering the presence of a deep donor level is presented. The model assumes that the barrier height is controlled by the energy distribution of interface states in equilibrium with the metal and the applied potential and does not include, explicitly, an interfacial layer. The model has been applied to extract interface state densities of Au and Al nGaAs guarded Schottky diodes fabricated from bulk and VPE
  • Keywords
    Capacitance-voltage characteristics; Data engineering; Density measurement; Gallium arsenide; Gold; Interface states; Schottky barriers; Schottky diodes; Systems engineering and theory; Temperature measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1976 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1976.189058
  • Filename
    1478770
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3554213