• DocumentCode
    3554261
  • Title

    Epitaxial heterojunction InAs1-xSbxphotodiodes

  • Author

    Pommerrenig, D.H. ; Kinoshita, M. ; Mantzouranis, A. ; Oishi, T.

  • Author_Institution
    Hamamatsu Corporation, Alexandria, Virginia
  • Volume
    22
  • fYear
    1976
  • fDate
    1976
  • Firstpage
    546
  • Lastpage
    549
  • Abstract
    Heterojunction p-InAs.95Sb.05/n-InSb photodiodes have been fabricated using gas phase epitaxially grown material. The major differences between the performance of homojunction InSb and these devices will be discussed. It will be shown that detectors produced from this epitaxial material exhibit background-limited performance, excellent uniformity and enhanced blue response. Characteristics such as detectivity, responsivity, dynamic range and noise figures will be presented. Applications of these detectors in infrared optical systems will be pointed out.
  • Keywords
    Absorption; Biomedical optical imaging; Detectors; Heterojunctions; Optical materials; Optical sensors; Photodiodes; Photonic band gap; Sensor arrays; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1976 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1976.189103
  • Filename
    1478815
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3554261