DocumentCode
355455
Title
Infrared multiphoton-excited luminescence in porous silicon
Author
Chin, R.P. ; Doseok Kim ; Petrova-Koch, V. ; Shen, Y.R.
Author_Institution
Dept. of Phys., California Univ., Berkeley, CA, USA
fYear
1996
fDate
7-7 June 1996
Firstpage
87
Abstract
Summary form only given. We have studied luminescence from porous Si induced by infrared multiphoton excitation (MPE) using a picosecond tunable infrared source. The n-photon carrier excitation process was found to be direct at small n, but indirect through the stretch vibrational resonances of the SiH/sub x/ surface species in porous Si with n=7 or 8.
Keywords
elemental semiconductors; multiphoton spectra; photoluminescence; porous materials; silicon; Si; SiH/sub x/ surface species; carrier excitation; infrared multiphoton-excited luminescence; picosecond tunable source; porous silicon; stretch vibrational resonance; Azimuthal angle; Infrared detectors; Laser excitation; Luminescence; Optical fibers; Optical wavelength conversion; Resonance; Silicon; Solids; Tunable circuits and devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics and Laser Science Conference, 1996. QELS '96., Summaries of Papers Presented at the
Conference_Location
Anaheim, CA, USA
Print_ISBN
1-55752-444-0
Type
conf
Filename
865604
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