Channel hot electron effect in charge coupled devices

CCDs exhibit a channel hot electron effect analogous to the channel hot electron effect observed in IGFETs. The significance of this effect depends on the type of CCD and the technology used to fabricate it. However, a specific CCD structure and technology has been analysed to illustrate the basic principles and experimental methods which can be used to evaluate the effect for any charge coupled device. A four phase surface channel CCD was used for the analysis. The technology is n-channel, double polysilicon gate with 50 nm gate oxides and a 5Ω-cm substrate. A channel implant of 5.3×10¹¹cm^-2is used to raise the threshold of the FETs made concurrently with the CCDs.