DocumentCode
3554759
Title
GaInAsP/InP lasers and detectors for fiber optics communications at 1.1-1.3 µm
Author
Hsieh, J.J.
Author_Institution
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts
fYear
1978
fDate
4-6 Dec. 1978
Firstpage
628
Lastpage
629
Abstract
Diode lasers and avalanche diodes of GaInAsP/InP are under development for the 1.1-1.3 µm wavelength region of current interest for fiber optics applications. Early versions of both of these devices show highly promising performance characteristics. Current state-of-the-art results, as well as a description of the device structures, will be presented.
Keywords
Diode lasers; Fiber lasers; Indium phosphide; Optical detectors; Optical fiber communication; Optical fibers; Optical films; Photonic band gap; Substrates; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1978 International
Conference_Location
Washigton, DC, USA
Type
conf
DOI
10.1109/IEDM.1978.189496
Filename
1479921
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