• DocumentCode
    3554856
  • Title

    Triggerable semiconductor lasers

  • Author

    Copeland, J.A. ; Abbott, S.M. ; Holden, W.S.

  • Author_Institution
    Bell Laboratory, Holmdel, New Jersey
  • Volume
    25
  • fYear
    1979
  • fDate
    1979
  • Firstpage
    108
  • Lastpage
    110
  • Abstract
    A triggerable semiconductor laser emits light in very short (0.1 nS) intense (0.1 W) pulses with a few nS period when biased a fraction of a mA above a threshold current. Single, uniform lightwave pulses can be triggered by fractional-mA current pulses up to several nS in duration. This behavior was first seen in computer simulations of devices with a high electron-trap density (other causes are possible). Devices exhibiting this behavior have been found among the population of AlGaAs stripe lasers made by deep proton bombardment. A simple lightwave pulse regenerator has been built by adding a photodiode with less than unity gain. This circuit emits lightwave pulses with 6 pJ energy, less than 0.2 ns duration, and with an amplitude that is up to 15 times larger than the input pulse.
  • Keywords
    Computer simulation; Electron optics; Electron traps; Optical pulses; Protons; Pulse circuits; Pulse compression methods; Repeaters; Semiconductor lasers; Threshold current;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1979 Internationa
  • Type

    conf

  • DOI
    10.1109/IEDM.1979.189552
  • Filename
    1480417