• DocumentCode
    3554880
  • Title

    A new structure for VLSI bipolar technology

  • Author

    Seegebrecht, Peter K. ; Kim, Wonchan

  • Author_Institution
    Institut für Theoretische Elektrotechnik der RWTH-Aachen, Aachen, West-Germany
  • Volume
    25
  • fYear
    1979
  • fDate
    1979
  • Firstpage
    184
  • Lastpage
    187
  • Abstract
    A novel bipolar process which is complementary to the collector diffused isolation (CDI) process but compatible with the standard buried collector (SBC) process will be presented. The application of it to ECL. and I2L circuits show the advantages of small circuit size and improved performance.
  • Keywords
    Circuit testing; Coupling circuits; Doping; Electrical resistance measurement; Fabrication; Isolation technology; Logic circuits; Resistors; Transistors; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1979 Internationa
  • Type

    conf

  • DOI
    10.1109/IEDM.1979.189574
  • Filename
    1480439
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3554880