• DocumentCode
    3554893
  • Title

    RF annealing of radiation-induced electron traps in MOS structures

  • Author

    Ma, T.P. ; Chin, M.R.

  • Author_Institution
    Yale University, New Haven, Connecticut
  • Volume
    25
  • fYear
    1979
  • fDate
    1979
  • Firstpage
    224
  • Lastpage
    228
  • Abstract
    RF annealing technique has been successfully applied to remove the radiation-induced electron traps in MOS capacitors and n-channel MOSFET´s. The experimental details, including the annealing apparatus, sample fabrication and irradiation, sample measurements, and data analysis will be reported. Some possible mechanisms leading to the removal of neutral traps will be discussed.
  • Keywords
    Annealing; Contamination; Electron emission; Electron traps; MOS capacitors; MOSFET circuits; Plasma applications; Plasma confinement; Radio frequency; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1979 Internationa
  • Type

    conf

  • DOI
    10.1109/IEDM.1979.189585
  • Filename
    1480450
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3554893