DocumentCode
3554985
Title
Design and performance of resistive-gated MOSFETs for analog integrated circuits
Author
Ko, P.K. ; Muller, R.S.
Author_Institution
University of California, Berkeley, California
Volume
25
fYear
1979
fDate
1979
Firstpage
506
Lastpage
509
Abstract
Polysilicon resistive-gated MOSFETs are shown to be useful components for linear MOS applications as well as for signal mixers. Gate-resistance values can be varied from an effective 1 Gigaohm to 10 kilohms using ion implantation with boron. Theory for the resistive-gated MOSFET predicts high gain at low power and wide dynamic range with low harmonic distortion. Measurements confirm this theory.
Keywords
Analog integrated circuits; Application software; Boron; Conductivity; Doping; Electrical resistance measurement; Fabrication; Ion implantation; Laboratories; MOSFETs;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1979 Internationa
Type
conf
DOI
10.1109/IEDM.1979.189669
Filename
1480534
Link To Document