• DocumentCode
    3555012
  • Title

    A new CML memory cell for high density memory devices

  • Author

    Sekine, Masatoshi ; Sinozaki, Satoshi ; Menjo, Atsuthiko ; Saito, Sinji

  • Author_Institution
    NTIS Incorporated, Kanagawa, Japan
  • Volume
    25
  • fYear
    1979
  • fDate
    1979
  • Firstpage
    601
  • Lastpage
    604
  • Abstract
    A new CML cell structure is realized by introducing a new configuration for the load resistors in a cell. The load resistors are vertically integrated within multi-emitter transistor, resulting in a very small cell area. The cell size of 960 µm2is obtained by using 2 µm design rule, which is approximately 60% of the Schottky load cell. The operation of new cell is demonstrated by 1k bit CML RAM.
  • Keywords
    Circuits; Data processing; Energy consumption; Flip-flops; Laboratories; Random access memory; Read-write memory; Resistors; Semiconductor memory; Velocity measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1979 Internationa
  • Type

    conf

  • DOI
    10.1109/IEDM.1979.189695
  • Filename
    1480560
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3555012