DocumentCode
3555106
Title
Optimization of self-aligned silicon MESFETs for VLSI at micron dimensions
Author
Darley, H.M. ; Houston, T.W.
Author_Institution
Texas Instruments Incorporated, Dallas, Texas
Volume
26
fYear
1980
fDate
1980
Firstpage
34
Lastpage
37
Abstract
This paper discusses the experimental optimization of the structural parameters of MESFET devices using a new self-aligned MESFET structure that incorporates a source-drain extension. Detail device characteristics as a function of gate length and width are presented. Ring oscillator measurements have demonstrated speed-power products as low as 1.5 femtoJoules.
Keywords
Boron; Implants; Instruments; Laboratories; MESFETs; Metallization; Silicon; Structural engineering; Tail; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1980 International
Type
conf
DOI
10.1109/IEDM.1980.189745
Filename
1481188
Link To Document