• DocumentCode
    3555111
  • Title

    Polycrystalline devices in bipolar IC-technology

  • Author

    de Graaff, H.C. ; de Groot, J G

  • Author_Institution
    Philips Research Laboratories, Eindhoven - The Netherlands
  • Volume
    26
  • fYear
    1980
  • fDate
    1980
  • Firstpage
    46
  • Lastpage
    49
  • Abstract
    Low pressure CVD polysilicon films have been used for making resistors, lateral diodes and bipolar poly-mono transistors. Recombination via grain boundary states dominates the forward characteristics of the lateral diodes whereas Poole-Frenkel emission is probably responsible for the reverse characteristics. The normal and inverse characteristics of the transistors are largely influenced by parasitic lateral diodes Nevertheless βupand βdown-Values of 40 have been reached.
  • Keywords
    Boron; Diodes; Doping; Grain boundaries; Laboratories; Resistors; Semiconductor films; Silicon; Substrates; Thermionic emission;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1980 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1980.189749
  • Filename
    1481192
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3555111