DocumentCode
3555134
Title
GaAs FET large signal model and design applications
Author
Tajima, Yusuke ; Wrona, Beverly ; Mishima, Katsuhiko
Author_Institution
Raytheon Company Research Division, Waltham, Massachusetts
Volume
26
fYear
1980
fDate
1980
Firstpage
122
Lastpage
125
Abstract
A large signal GaAs FET model is derived based on dc characteristics of the devices. Analytical expressions of nonlinear elements in the model are presented in a form convenient for circuit design. Power saturation and gain characteristics of a GaAs FET are studied theoretically and experimentally. An oscillator design employing the large signal model is demonstrated.
Keywords
Capacitance; Equivalent circuits; FETs; Gallium arsenide; Intrusion detection; Oscillators; Power amplifiers; Predictive models; Signal design; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1980 International
Type
conf
DOI
10.1109/IEDM.1980.189769
Filename
1481212
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