DocumentCode
3555182
Title
Verification of heavy doping parameters in semiconductor device modeling
Author
Gaur, S.P. ; Srinivasan, G.R. ; Antipov, I.
Author_Institution
IBM Data Systems Division, Hopewell Junction, New York
Volume
26
fYear
1980
fDate
1980
Firstpage
276
Lastpage
279
Abstract
A mathematical model has been formulated which solves semiconductor transport equations with heavy-doping corrections. This model requires only the device dimension and doping profile as input parameters. Model predictions agree very well with measured terminal characteristics of various NPN and PNP transistor structures and support heavy-doping parameters used in the model.
Keywords
Equations; Integrated circuit modeling; Mathematical model; Neodymium; Photonic band gap; Radiative recombination; Semiconductor device doping; Semiconductor device modeling; Semiconductor process modeling; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1980 International
Type
conf
DOI
10.1109/IEDM.1980.189813
Filename
1481256
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