DocumentCode
3555276
Title
Plasma resist image stabilization technique (PRIST)
Author
Ma, W.H.-L.
Author_Institution
IBM Data Systems Division, Hopewell Junction, New York
Volume
26
fYear
1980
fDate
1980
Firstpage
574
Lastpage
575
Abstract
PRIST, using a fluorocarbon plasma, effectively stabilizes the developed resist image in the production of integrated circuits. This plasma treatment, which is done at low power for a short time, allows the resist to be baked in excess of 210°C with no measurable change in dimensions. This phenomenon is attributed to the change in thermal properties of the resist surface effected by the active fluorine and fluorocarbon species generated in the plasma.
Keywords
Etching; Inductors; Plasma applications; Plasma immersion ion implantation; Plasma materials processing; Plasma measurements; Plasma properties; Plasma temperature; Resists; Surface treatment;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1980 International
Type
conf
DOI
10.1109/IEDM.1980.189897
Filename
1481340
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