• DocumentCode
    3555325
  • Title

    Characterization of two step impact ionization and its influence in NMOS and PMOS VLSI´s

  • Author

    Matsunaga, J. ; Momose, Hiroshi ; Iizuka, Hisakazu ; Kohyama, SusumuK

  • Author_Institution
    Toshiba Corporation, Kawasaki, Japan
  • Volume
    26
  • fYear
    1980
  • fDate
    1980
  • Firstpage
    736
  • Lastpage
    739
  • Abstract
    Two step impact ionization phenomena near the high electric field drain region are characterized, both theoretically and experimentally, in small geometry NMOS and PMOS structures. Influences of primary and secondary impact ionized carrier flows are quantitatively considered as design constraints in high density MOS memories, more specifically for CMOS devices and also for poly-Si resistor load RAM cells.
  • Keywords
    Current measurement; Geometry; Impact ionization; Intrusion detection; MOS devices; Resistors; Semiconductor devices; Silicon; Substrates; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1980 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1980.189942
  • Filename
    1481385
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3555325