A DC model for the HEMT including the effect of parasitic conduction

Author

Saleh, M. ; El-Nokali, M.

Author_Institution

Dept. of Electr. Eng., Pittsburgh Univ., PA, USA

fYear

1991

fDate

12-14 Jun 1991

Firstpage

164

Lastpage

168

Abstract

A DC model for AlGaAs-GaAs high electron mobility transistor (HEMT) is proposed. The model considers the parasitic parallel conduction in AlGaAs, which becomes important for large gate voltages, together with other important effects, such as field-dependent mobility, channel length modulation, maximum concentration of the two-dimensional electron gas, and series resistances. The theoretical predictions of the model are compared with the experimental data and are found to be in good agreement over a wide range of bias conditions

Keywords

III-V semiconductors; aluminium compounds; carrier mobility; electron gas; gallium arsenide; high electron mobility transistors; semiconductor device models; AlGaAs-GaAs; DC model; HEMT; bias conditions; channel length modulation; field-dependent mobility; gate voltages; high electron mobility transistor; parasitic parallel conduction; series resistances; two-dimensional electron gas; Conducting materials; Digital integrated circuits; Electrons; Gallium arsenide; HEMTs; MODFETs; Poisson equations; Predictive models; Semiconductor materials; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

University/Government/Industry Microelectronics Symposium, 1991. Proceedings., Ninth Biennial

Conference_Location

Melbourne, FL

ISSN

0749-6877

Print_ISBN

0-7803-0109-9

Type

conf

DOI

10.1109/UGIM.1991.148143

Filename

148143