A subthreshold model for the analysis of MOS IC´s

Author

El-Nokali, M. ; Afzali-Kushaa, A.

Author_Institution

Dept. of Electr. Eng., Pittsburgh Univ., PA, USA

fYear

1991

fDate

12-14 Jun 1991

Firstpage

169

Lastpage

172

Abstract

An accurate and computationally efficient charge-based model for the intrinsic capacitances in MOS transistors is proposed. The model is valid in the subthreshold regime, and is based on the quasi-static approximation. By integrating this model with a corresponding one in the strong inversion regime, a complete model valid in all regions of operation is presented. An interpolation scheme which guarantees the continuity of the drain current and the capacitances as well as their derivatives is used to provide a smooth transition from subthreshold to strong inversion

Keywords

MOS integrated circuits; capacitance; insulated gate field effect transistors; semiconductor device models; MOS transistors; MOSFET; charge-based model; drain current; interpolation scheme; intrinsic capacitances; quasi-static approximation; strong inversion regime; subthreshold model; Analog circuits; Capacitance; Circuit simulation; Computational modeling; Equations; Integrated circuit modeling; Interpolation; MOSFETs; Semiconductor process modeling; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

University/Government/Industry Microelectronics Symposium, 1991. Proceedings., Ninth Biennial

Conference_Location

Melbourne, FL

ISSN

0749-6877

Print_ISBN

0-7803-0109-9

Type

conf

DOI

10.1109/UGIM.1991.148144

Filename

148144