Polycrystalline diamond device processing

Author

Ellis, Charles D. ; Ramesham, Rajeshuni ; Roppel, Thaddeus A.

Author_Institution

Dept. of Electr. Eng., Auburn Univ., AL, USA

fYear

1991

fDate

12-14 Jun 1991

Firstpage

222

Lastpage

225

Abstract

1 The authors describe processes developed for the fabrication of accelerometers, flow sensors, and microchannel cooling structures, using selectively deposited films and silicon micromachining. The diamond films were grown using an ASTeX high-pressure microwave chemical vapor deposition reactor at 950+/-25°C with a growth rate of approximately 1 μm/h. It was found that polycrystalline diamond films can be used to fabricate various microstructures. A technique for doping diamond films is shown to lower the resistance of the as-grown films

Keywords

accelerometers; cooling; diamond; elemental semiconductors; flowmeters; heat sinks; micromechanical devices; plasma CVD; semiconductor doping; semiconductor growth; 925 to 975 C; ASTeX; Si micromachining; accelerometers; diamond film doping; fabrication; flow sensors; growth rate; high pressure microwave CVD system; microchannel cooling structures; microstructures; polycrystalline diamond device processing; polycrystalline diamond films; polycrystalling C films; selectively deposited films; semiconductors; Accelerometers; Chemical sensors; Cooling; Fabrication; Microchannel; Micromachining; Microwave devices; Semiconductor films; Sensor phenomena and characterization; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

University/Government/Industry Microelectronics Symposium, 1991. Proceedings., Ninth Biennial

Conference_Location

Melbourne, FL

ISSN

0749-6877

Print_ISBN

0-7803-0109-9

Type

conf

DOI

10.1109/UGIM.1991.148154

Filename

148154