• DocumentCode
    3555449
  • Title

    Effect of proton bombardment isolation on the DC and transient characteristics of Schottky barriers on AlxGa1-xAs

  • Author

    Liu, Y.Z. ; Anderson, R.J. ; Milano, R.A. ; Cohen, Marshall J.

  • Author_Institution
    Rockwell International, Thousand Oaks, California
  • Volume
    27
  • fYear
    1981
  • fDate
    1981
  • Firstpage
    100
  • Lastpage
    103
  • Abstract
    The dark current of Schottky barrier diodes on n-AlGaAs/p-GaAs/n+GaAs structures isolated with a proton bombardment guard ring is measured as a function of proton dose. It was found that the optimum proton dose is near 1014cm-2which resulted in a dark current of 130 pA/cm2. The DC leakage currents are much greater than the dark currents under charge integration conditions and can be explained as a hole current from the p-GaAs to the Schottky metal.
  • Keywords
    Capacitance; Charge coupled devices; Dark current; Electrons; Leakage current; Microelectronics; Pixel; Protons; Schottky barriers; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1981 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1981.190009
  • Filename
    1481962
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3555449