• DocumentCode
    3555453
  • Title

    Performance of InP IGFET´s fabricated with a virtual self-aligned process

  • Author

    Tseng, W.F. ; Bark, M.L. ; Dietrich, H.B. ; Christou, A. ; Henry, R.L. ; Schmidt, W.A. ; Saks, N.S.

  • Author_Institution
    Naval Research Laboratory, Washington, D. C.
  • Volume
    27
  • fYear
    1981
  • fDate
    1981
  • Firstpage
    111
  • Lastpage
    114
  • Abstract
    A "virtual" self-aligned, ion implantation process for fabricating IGFETs has been developed. N-channel IGFETs fabricated in semi-insulating InP substrates with this process show: (1) square-law characteristics, (2) an inverse-relationship between transconductance (gm) and gate length ( L ), gmċ L ≈ 6 mS ċ µm, and (3) high surface channel electron mobilities on the order of 1000 cm2/V.sec.
  • Keywords
    Electron mobility; Etching; Indium phosphide; Insulation; Integrated circuit technology; Ion implantation; Laboratories; Protection; Resists; Transconductance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1981 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1981.190013
  • Filename
    1481966
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3555453