• DocumentCode
    3555462
  • Title

    SnO2/n-Si solar cell

  • Author

    Hayashi, Yutaka ; Yamanaka, Mitsuyuki ; Murayama, Jin

  • Author_Institution
    Electrotechnical Laboratory, Ibaraki, Japan
  • Volume
    27
  • fYear
    1981
  • fDate
    1981
  • Firstpage
    138
  • Lastpage
    141
  • Abstract
    Low cost and low production energy SnO2/n-Si solar cells with conversion efficiency of 15.4% (at best) (66mW/cm2, AMl spectrum) were obtained by low temperature CVD of SnO2using SnCl4, H2O and SbCl5as source meterial. The maximum processing temperature of the CVD was 350°C. This low temperature CVD processing makes continuous volume production of the cells far easier than conventional technologies. Stability of the cell was studied under various ambient condition and a stable cell/module structure was developed. Dependence of cell characteristics on the processing conditions and stability data of the fabricated cells are reported.
  • Keywords
    Circuits; Costs; Optical films; Photovoltaic cells; Production; Semiconductor films; Stability; Substrates; Temperature; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1981 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1981.190021
  • Filename
    1481974
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3555462