Relation between performance of Hg1-xCdxTe infrared detectors and grain boundary angles of their material

The purpose of this work is to clarify the relation between the performance of HgCdTe infrared detectors and the grain boundary angles of their material. Two type of devices are studied; MIS diode and photoconductive devices. The grain boundary angles are measured by the X-ray diffraction method and the experimental results on the fabricated devices at 77K are summarized. It has been found that small-grain boundary below 0.05° has little effect for the MIS diode with a peak wavelength of 5µm and the grain boundary above 0.1° decreases a storage time and a maximum surface potential of the MIS diode. In addition, it has been confirmed that the small-angle grain boundary below 0.1° does not act as the recombination centers and noise sources of photoconductive detector with a peak wavelength of 12µm.