DocumentCode
3555604
Title
Feature size limit analysis of lift-off metallization technology
Author
Homma, Yoshio ; Yajima, Akio ; Harada, Seiki
Author_Institution
Hitachi Ltd., Tokyo, Japan
Volume
27
fYear
1981
fDate
1981
Firstpage
570
Lastpage
573
Abstract
Feature size limits for lift-off metallization patterns were evaluated both experimentally and by computer simulation. The mechanism producing smoothly sloped pattern profiles was clarified. It is shown that the slope angle can be changed from 20° to 70° with polyimide lift-off technology. Feature size limit for lift-off metallization patterns is determined by reverse mask topology, material characteristics, and the maximum incident angle of the metallization deposition, though it is independent on metallization thickness. In a sample application of the technology to fabrication of interconnections on rugged LSI surfaces, the minimum pitch of the polyimide lift-off metallization patterns is estimated to be 2.6 µm.
Keywords
Computer simulation; Inorganic materials; Laboratories; Large scale integration; Metallization; Polyimides; Sputter etching; Substrates; Topology; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1981 International
Type
conf
DOI
10.1109/IEDM.1981.190148
Filename
1482101
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