• DocumentCode
    3555604
  • Title

    Feature size limit analysis of lift-off metallization technology

  • Author

    Homma, Yoshio ; Yajima, Akio ; Harada, Seiki

  • Author_Institution
    Hitachi Ltd., Tokyo, Japan
  • Volume
    27
  • fYear
    1981
  • fDate
    1981
  • Firstpage
    570
  • Lastpage
    573
  • Abstract
    Feature size limits for lift-off metallization patterns were evaluated both experimentally and by computer simulation. The mechanism producing smoothly sloped pattern profiles was clarified. It is shown that the slope angle can be changed from 20° to 70° with polyimide lift-off technology. Feature size limit for lift-off metallization patterns is determined by reverse mask topology, material characteristics, and the maximum incident angle of the metallization deposition, though it is independent on metallization thickness. In a sample application of the technology to fabrication of interconnections on rugged LSI surfaces, the minimum pitch of the polyimide lift-off metallization patterns is estimated to be 2.6 µm.
  • Keywords
    Computer simulation; Inorganic materials; Laboratories; Large scale integration; Metallization; Polyimides; Sputter etching; Substrates; Topology; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1981 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1981.190148
  • Filename
    1482101