Ultralow threshold current lasers

Author

Dapkus, P.D. ; MacDougal, M.H. ; Gye Mo Yang ; Chao-Kun Lin ; Tishinin, D. ; Pudikov, V. ; Cheng, Yuan Bing ; Uppal, Karan

Author_Institution

Nat. Center for Integrated Photonic Technol., Univ. of Southern California, Los Angeles, CA, USA

fYear

1996

fDate

7-7 June 1996

Firstpage

168

Lastpage

169

Abstract

Summary form only given. Ultralow threshold current vertical-cavity surface-emitting lasers (VCSELs) will enable practical laser-based smart pixels. Such devices have emerged through the application of monolithically integrated native oxides of AlGaAs as current constriction and mode control layers and as high-contrast Bragg reflectors. In this paper we will, demonstrate and analyze the role of the oxide in current constriction and optical field control to predict the scaling of VCSELs to microamp thresholds.

Keywords

III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; integrated optoelectronics; laser cavity resonators; laser modes; laser theory; semiconductor lasers; smart pixels; surface emitting lasers; ultralow threshold current lasers; Absorption; Current measurement; Delay; Laser modes; Nanocrystals; Optical pulses; Phonons; Pulse measurements; Threshold current; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Quantum Electronics and Laser Science Conference, 1996. QELS '96., Summaries of Papers Presented at the

Conference_Location

Anaheim, CA, USA

Print_ISBN

1-55752-444-0

Type

conf

Filename

865721