A 1000V high voltage P-channel DSAMOS-IC

The object of this work is to develop a high voltage P-channel MOS IC for display driving. High voltage PMOS devices are suitable for current source drivers of plasma display, or vacuum fluorescent display. Low voltage circuits have been integrated with high voltage PMOS devices on a same chip. The high voltage PMOS transistor consists of lateral lightly doped drift region (P-) and a Diffusion-Self-Aligned (DSA) structure on a low impurity substrate (ν) and of multilayer field plates to ensure high reliability for the device. The device structure and process parameter are optimized by using process simulator "SUPREM II". The high voltage P-channel MO5 device provides 1000-V drain-breakdown voltage and can operate at 800-V drain-source voltage with 35mA drain current, on resistance as low as 1.5KΩ within an active area of 0.14mm².