DocumentCode
3555885
Title
Advanced planar metallization with polymer for VLSI
Author
Nishida, Takashi ; Saiki, Atsushi ; Homma, Yoshio ; Mukai, Kiichiro
Author_Institution
Central Research Laboratory, Hitachi, Ltd., Tokyo, Japan
Volume
28
fYear
1982
fDate
1982
Firstpage
552
Lastpage
555
Abstract
An advanced planar metallization technology has been developed that makes use of PIQ®(a polyimide type resin from Hitachi Chemical Co.). This technology employs a novel taper control etching approach for fine via holes, a sputter cleaning for low via hole contact resistance, and an A1 RIE for fine metallization patterning. Taper-controlled via holes in thick PIQ film satisfy demands for both minimizing via hole area and maintaining reliable step coverage in overlapping metallization at via hole steps. Appropriate sputter cleaning conditions accomplish low via hole contact resistance, eliminating undesirable influences on the polymer surface. Full use of RIE for both first and second metallization, in combination with taper control etching, provides 5
m pitch metallization. This technology, because of its excellent planarization and newly developed techniques, is shown to be applicable to highly packed multi-level interconnections for future VLSIs.
m pitch metallization. This technology, because of its excellent planarization and newly developed techniques, is shown to be applicable to highly packed multi-level interconnections for future VLSIs.Keywords
Chemical technology; Cleaning; Contact resistance; Maintenance; Metallization; Polyimides; Polymers; Resins; Sputter etching; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1982 International
Type
conf
DOI
10.1109/IEDM.1982.190351
Filename
1482885
Link To Document