• DocumentCode
    3555885
  • Title

    Advanced planar metallization with polymer for VLSI

  • Author

    Nishida, Takashi ; Saiki, Atsushi ; Homma, Yoshio ; Mukai, Kiichiro

  • Author_Institution
    Central Research Laboratory, Hitachi, Ltd., Tokyo, Japan
  • Volume
    28
  • fYear
    1982
  • fDate
    1982
  • Firstpage
    552
  • Lastpage
    555
  • Abstract
    An advanced planar metallization technology has been developed that makes use of PIQ®(a polyimide type resin from Hitachi Chemical Co.). This technology employs a novel taper control etching approach for fine via holes, a sputter cleaning for low via hole contact resistance, and an A1 RIE for fine metallization patterning. Taper-controlled via holes in thick PIQ film satisfy demands for both minimizing via hole area and maintaining reliable step coverage in overlapping metallization at via hole steps. Appropriate sputter cleaning conditions accomplish low via hole contact resistance, eliminating undesirable influences on the polymer surface. Full use of RIE for both first and second metallization, in combination with taper control etching, provides 5 \\\\mu m pitch metallization. This technology, because of its excellent planarization and newly developed techniques, is shown to be applicable to highly packed multi-level interconnections for future VLSIs.
  • Keywords
    Chemical technology; Cleaning; Contact resistance; Maintenance; Metallization; Polyimides; Polymers; Resins; Sputter etching; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1982 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1982.190351
  • Filename
    1482885