• DocumentCode
    3555935
  • Title

    Cell model for E2PROM floating-gate memories

  • Author

    Suciu, Paul I. ; Cox, Bill P. ; Rinerson, Darrell D. ; Cagnina, Sal F.

  • Author_Institution
    Advanced Micro Devices, Sunnyvale, CA, USA
  • Volume
    28
  • fYear
    1982
  • fDate
    1982
  • Firstpage
    737
  • Lastpage
    740
  • Abstract
    A model that describes the cell behavior for E2PROM memories was developed and shows good agreement with experimental evidence. The model uses as inputs the Fowler-Nordheim tunneling equation, the cell characteristics and the shape of the programming pulse, to describe the electric fields and the threshold voltages of the cell. Special attention is dedicated to properly measuring the tunneling currents.
  • Keywords
    Capacitance; Dielectrics; Electrons; Equations; Nonvolatile memory; PROM; Pulse shaping methods; Shape; Threshold voltage; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1982 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1982.190400
  • Filename
    1482934
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3555935