• DocumentCode
    3555976
  • Title

    A two-dimensional SI oxidation model including viscoelasticity

  • Author

    Matsumoto, H. ; Fukuma, M.

  • Author_Institution
    NEC Corp., Kawasaki, JAPAN
  • Volume
    29
  • fYear
    1983
  • fDate
    1983
  • Firstpage
    39
  • Lastpage
    42
  • Abstract
    This paper proposes a new oxidation model that can be applied to spatially non-uniform oxidations in a two dimensional scheme. The model describes the viscoelastic deformation of SiO2and the oxidation masking material as well as the oxidant diffusion in the growing SiO2. The Maxwell model is assumed for the stress relaxation function. The viscoelastic equation is solved using the boundary element method. Simulations aimed for the LOCOS oxide growth result in good agreement with experimental data. This model is found to be suitable for oxidation characterization for VLSIs.
  • Keywords
    Deformable models; Elasticity; Equations; Laboratories; Microelectronics; Oxidation; Predictive models; Tensile stress; Very large scale integration; Viscosity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1983 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1983.190435
  • Filename
    1483560
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3555976